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ASMCC0096
APPLICATION SPECIFIC MULTI CHIP CIRCUIT ASMCCTM Features
* * * Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Lead Free Product
SOT-363
A
Dim A
BC
Min 0.10 1.15 2.00 0.30 1.80 3/4 0.90 0.25 0.10 0
Max 0.30 1.35 2.20 0.40 2.20 0.10 1.00 0.40 0.25 8
B C D
Mechanical Data
* * * * * * * * Case: SOT-363, Molded Plastic Case material - UL Flammability Rating Classification 94V-0 Moisture sensitivity: Level 1 per J-STD-020A Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Below Marking: A96 Date Code & Marking Information: See Page 2 Weight: 0.008 grams (approx.)
G H K
0.65 Nominal
F H
M
J K L M a
J
D
F
L
All Dimensions in mm
K1 NC E1
UDZ5V6B
MMBT3904
A1 B1 C1
Maximum Ratings, Total Device @ TA = 25C unless otherwise specified
Characteristic Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Symbol Pd RqJA Tj, TSTG Value 200 625 -55 to +150 Unit mW C/W C
Maximum Ratings, NPN Transistor Element
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous (Note 1)
@ TA = 25C unless otherwise specified Symbol VCBO VCEO VEBO IC Value 60 60 6.0 200 Unit V V V mA
Maximum Ratings, Zener Element
Characteristic Forward Voltage Notes:
@ TA = 25C unless otherwise specified Symbol Value 0.9 Unit V
@ IF = 10mA
VF
1. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
DS30379 Rev. 3 - 2
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ASMCC0096
a Diodes Incorporated
Electrical Characteristics, NPN Transistor Element
Characteristic OFF CHARACTERISTICS (Note 2) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 2) 40 70 100 60 30 3/4 0.65 3/4 3/4 3/4 1.0 0.5 100 1.0 300 3/4 V(BR)CBO V(BR)CEO V(BR)EBO ICEX IBL 60 40 6.0 3/4 3/4 Symbol Min
@ TA = 25C unless otherwise specified Max 3/4 3/4 3/4 50 50 3/4 3/4 300 3/4 3/4 0.20 0.30 0.85 0.95 Unit Test Condition
V V V nA nA
IC = 10mA, IE = 0 IC = 1.0mA, IB = 0 IE = 10mA, IC = 0 VCE = 30V, VEB(OFF) = 3.0V VCE = 30V, VEB(OFF) = 3.0V
DC Current Gain
hFE
3/4
IC = 100A, VCE = IC = 1.0mA, VCE = IC = 10mA, VCE = IC = 50mA, VCE = IC = 100mA, VCE =
1.0V 1.0V 1.0V 1.0V 1.0V
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small Signal Current Gain Output Admittance Current Gain-Bandwidth Product Noise Figure SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time
VCE(SAT) VBE(SAT)
V V
IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA
Cobo Cibo hie hre hfe hoe fT NF
4.0 8.0 10 8.0 400 40 3/4 5.0
pF pF kW x 10-4 3/4 mS MHz dB
VCB = 5.0V, f = 1.0MHz, IE = 0 VEB = 0.5V, f = 1.0MHz, IC = 0
VCE = 10V, IC = 1.0mA, f = 1.0kHz
VCE = 20V, IC = 10mA, f = 100MHz VCE = 5.0V, IC = 100mA, RS = 1.0kW, f = 1.0kHz
t@ TA = 25C unless otherwise specified VCC = 3.0V, IC = 10mA, 3/4 35 ns d VBE(off) = - 0.5V, IB1 = 1.0mA tr 3/4 35 ns ts tf 3/4 3/4 200 50 ns ns VCC = 3.0V, IC = 10mA, IB1 = IB2 = 1.0mA
Electrical Characteristics, Zener Element @ TA = 25C unless otherwise specified
Zener Voltage Range (Note 2) Type Number Nom (V) UDZ5V6B Notes: 5.6 VZ @ IZT Min (V) 5.49 Max (V) 5.73 IZT mA 5 60 Maximum Zener Impedance ZZT @ IZT W 200 ZZK @ IZK = 0.5mA Maximum Reverse Leakage Current IR mA 1.0 @VR V 2.5
2. Short duration test pulse used to minimize self-heating effect.
DS30379 Rev. 3 - 2
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ASMCC0096
Ordering Information
Device ASMCC0096-7 ASMCC0096-13 Notes:
(Note 3) Packaging SOT-363 SOT-363 Shipping 3000/Tape & Reel 10,000/Tape & Reel
3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
A96
Date Code Key Year Code Month Code 1998 J Jan 1 1999 K Feb 2 2000 L March 3 2001 M Apr 4
A96 = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September
YM
2002 N May 5
2003 P Jun 6
2004 R Jul 7
2005 S Aug 8
2006 T Sep 9
2007 U Oct O
2008 V Nov N
2009 W Dec D
DS30379 Rev. 3 - 2
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ASMCC0096
MMBT3904 Section
200
CIBO, INPUT CAPACITANCE (pF) COBO, OUTPUT CAPACITANCE (pF) 15
f = 1MHz
PD, POWER DISSIPATION (mW)
150
10
100
5
Cibo
50
Cobo
0 0 25 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (C) Fig. 1, Max Power Dissipation vs Ambient Temperature (Total Device)
0 0.1
1
10
100
VCB, COLLECTOR-BASE VOLTAGE (V) Fig. 2, Input and Output Capacitance vs. Collector-Base Voltage (Transistor Element)
1000
VCE(SAT), COLLECTOR-EMITTER (V) SATURATION VOLTAGE
1
IC IB = 10
hFE, DC CURRENT GAIN
TA = 125C
100
TA = -25C
TA = +25C
0.1
10
VCE = 1.0V
1 0.1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 3, Typical DC Current Gain vs Collector Current (Transistor Element)
0.01 0.1 1 10 100 1000
IC, COLLECTOR CURRENT (mA) Fig. 4, Typical Collector-Emitter Saturation Voltage vs. Collector Current (Transistor Element)
10
IC IB = 10
VBE(SAT), BASE-EMITTER (V) SATURATION VOLTAGE
1
0.1 0.1
1
10
100
1000
IC, COLLECTOR CURRENT (mA) Fig. 5, Typical Base-Emitter Saturation Voltage vs. Collector Current (Transistor Element)
DS30379 Rev. 3 - 2
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ASMCC0096
UDZ5V6B Section
IF, INSTANTANEOUS FORWARD CURRENT (mA) 1000
100
10
1.0
0.1
0.01 0
0.2
0.4
0.6
0.8
1.0
1.2
VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 6 Typical Forward Characteristics
DS30379 Rev. 3 - 2
5 of 5 www.diodes.com
ASMCC0096

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